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| SI4404DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 23 17 rDS(on) (W) 0.0065 @ VGS = 10 V 0.008 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S S S G 1 2 3 4 Top View Ordering Information: SI4404DY SI4404DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 23 19 60 2.9 3.5 2.2 Steady State Unit V 15 12 A 1.3 1.6 1 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71247 S-31873--Rev. F, 15-Sep-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 29 67 13 Maximum 35 80 16 Unit _C/W C/W 1 SI4404DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 23 A VGS = 4.5 V, ID = 17 A VDS = 15 V, ID = 23 A IS = 2.9 A, VGS = 0 V 30 0.0045 0.0068 80 0.8 1.2 0.0065 0.008 1.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 1.5 VDS = 15 V, VGS = 4.5 V, ID = 23 A 36 15 12 2.2 20 15 105 40 50 3.7 30 23 160 60 80 ns W 55 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 40 30 20 10 0 0.0 Output Characteristics VGS = 10 thru 4 V 60 50 40 30 20 Transfer Characteristics I D - Drain Current (A) I D - Drain Current (A) 3V TC = 125_C 10 0 0.0 25_C - 55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71247 S-31873--Rev. F, 15-Sep-03 2 SI4404DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.010 On-Resistance vs. Drain Current 6000 5000 Capacitance r DS(on) - On-Resistance ( W ) 0.008 VGS = 4.5 V 0.006 VGS = 10 V C - Capacitance (pF) Ciss 4000 3000 2000 Coss 1000 0 Crss 0 6 12 18 24 30 0.004 0.002 0.000 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 23 A Gate Charge 1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 23 A 6 4 2 0 0 20 40 60 80 Qg - Total Gate Charge (nC) r DS(on) - On-Resistance (W) (Normalized) 8 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.010 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.008 I S - Source Current (A) 0.006 TJ = 25_C 0.004 ID = 23 A 0.002 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 71247 S-31873--Rev. F, 15-Sep-03 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 SI4404DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 Power (W) ID = 250 mA 60 50 Single Pulse Power 40 30 20 10 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71247 S-31873--Rev. F, 15-Sep-03 |
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